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(a) Schematic view of the studied devices showing the experimental C-AFM setup. (b) TEM cross-section of the whole structure consisting in a Au(TE)/CuTCNQ/3 nm .
(a) Typical C-AFM local I-V curves recorded on CuTCNQ NWs. The numbers denote the chronological sequence of the I-V response. (b) Resistance extracted in LRS and HRS states from 70 local I-V measurements on a area. Note that current plateaus observed at correspond to a saturation of the current amplifier.
Local I-t curve obtained by C-AFM, tip being biased at −2 V. Stepwise current spikes are explained in terms of Cu CF formed between tip and CuTCNQ complex.
(a) Spatial evolution of the concentration of ions at different times due to drift-diffusion inside the nanogap lying between a CuTCNQ NW and the AFM tip. (b) Growth of the conductive filament due to the reduction in at the cathode.
Comparison between experimental C-AFM data and the proposed model during switching. and values were taken from experimental data.
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