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Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories
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10.1063/1.3458596
/content/aip/journal/apl/96/26/10.1063/1.3458596
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3458596
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic view of the studied devices showing the experimental C-AFM setup. (b) TEM cross-section of the whole structure consisting in a Au(TE)/CuTCNQ/3 nm .

Image of FIG. 2.
FIG. 2.

(a) Typical C-AFM local I-V curves recorded on CuTCNQ NWs. The numbers denote the chronological sequence of the I-V response. (b) Resistance extracted in LRS and HRS states from 70 local I-V measurements on a area. Note that current plateaus observed at correspond to a saturation of the current amplifier.

Image of FIG. 3.
FIG. 3.

Local I-t curve obtained by C-AFM, tip being biased at −2 V. Stepwise current spikes are explained in terms of Cu CF formed between tip and CuTCNQ complex.

Image of FIG. 4.
FIG. 4.

(a) Spatial evolution of the concentration of ions at different times due to drift-diffusion inside the nanogap lying between a CuTCNQ NW and the AFM tip. (b) Growth of the conductive filament due to the reduction in at the cathode.

Image of FIG. 5.
FIG. 5.

Comparison between experimental C-AFM data and the proposed model during switching. and values were taken from experimental data.

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/content/aip/journal/apl/96/26/10.1063/1.3458596
2010-06-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3458596
10.1063/1.3458596
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