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Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors
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10.1063/1.3458700
/content/aip/journal/apl/96/26/10.1063/1.3458700
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3458700
/content/aip/journal/apl/96/26/10.1063/1.3458700
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/content/aip/journal/apl/96/26/10.1063/1.3458700
2010-07-02
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3458700
10.1063/1.3458700
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