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Tunneling processes in thin MgO magnetic junctions
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10.1063/1.3458701
/content/aip/journal/apl/96/26/10.1063/1.3458701
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3458701
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

-dependence of in AP and P states for selected MTJs with (a) , (b) 0.85 nm, (c) 1.05 nm, and (d) 1.15 nm. The solid lines are fits to the experimental databased on the direct elastic tunneling model.

Image of FIG. 2.
FIG. 2.

(a) for MgO MTJs with . Solid lines are fits to the experimental databased on direct elastic tunneling model. (b) Spin polarization at 0 K and parameter as a function of .

Image of FIG. 3.
FIG. 3.

Relative MTJ-conductance change for P (a) and AP (b) states between 20 K and RT, defined as (lines are a guide to the eye).

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/content/aip/journal/apl/96/26/10.1063/1.3458701
2010-06-29
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunneling processes in thin MgO magnetic junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3458701
10.1063/1.3458701
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