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Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser
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10.1063/1.3458708
/content/aip/journal/apl/96/26/10.1063/1.3458708
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3458708
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Illustration of the base stochastic doping distribution roughening (via tunneling) the QW wall of an n-p-n LET or TL. (b) LET or TL base QW wall (a tunneling “slice”) “porous” to holes because of higher space-charge electric field.

Image of FIG. 2.
FIG. 2.

(a) Band diagram along the direction (1) shown in Fig. 1, and in (b) superimposed (in red) on the band diagram along direction (2) showing hole barrier lowering (tunneling “slice,” “porous” QW), resulting in strong coupling of the continuum states in the base (barrier) to the QW “bound” hole state via the transition .

Image of FIG. 3.
FIG. 3.

The spontaneous microwave optical signal bandwidth at −3 dB, , vs base current density, , of an n-p-n QW LET.

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/content/aip/journal/apl/96/26/10.1063/1.3458708
2010-06-28
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3458708
10.1063/1.3458708
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