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Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
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10.1063/1.3458783
/content/aip/journal/apl/96/26/10.1063/1.3458783
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3458783
/content/aip/journal/apl/96/26/10.1063/1.3458783
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/content/aip/journal/apl/96/26/10.1063/1.3458783
2010-06-30
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3458783
10.1063/1.3458783
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