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Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
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Image of FIG. 1.
FIG. 1.

Nanoscale MOSFET collected at a 100 kHz sample rate during (a) 500 keV He and (b) 14 keV P irradiation. Discrete steps represent single ion impacts. The time trace has been binned down to (a) 25 kHz, (b) 5 and 0.2 kHz using the time scale of the step as a guide. The derivative is shown under each trace. Schematics of the devices with channel width , length , and height are shown. The top right inset of (b) shows the second step observed after the first step. A false color scanning electron microscopy image, transmission electron microscopy image of the channel cross section, and atomic force microscopy image of a double gated MOSFET identical to those under study are shown in (c), (d), and (e), respectively.

Image of FIG. 2.
FIG. 2.

Probability of single donor placement calculated with SRIM as a function of depth through the nanoscale SOI MOSFET. The inset shows the probability of placing a atom in the channel. The shaded areas represent the part of the device.

Image of FIG. 3.
FIG. 3.

IV curves before and after irradiation with 14 keV (solid lines) and 500 keV (dashed lines) showing (a) the subthreshold region and the saturation region for (b) He2 and (c) P1. The arrows in (a) show the direction shifts during implantation.


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Table I.

Summary of the devices under study.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation