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Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using -type a-In–Ga–Zn–O and -type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors
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10.1063/1.3458799
/content/aip/journal/apl/96/26/10.1063/1.3458799
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3458799
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Photograph of the flexible complementary inverter sheet. (b) Device structure. -type a-IGZO TFTs were vertically stacked on -type F8T2 TFTs. (c) Top-view photograph of a complementary inverter.

Image of FIG. 2.
FIG. 2.

(a) Transfer characteristics of a -type F8T2 TFT (red line) and a -type a-IGZO TFT (blue line) in an inverter at . The dashed lines show plots. (b) and (c) show the output characteristics for the F8T2 TFT and the a-IGZO TFT, respectively.

Image of FIG. 3.
FIG. 3.

(a) Circuit diagram of the complementary inverter. (b) VTC of the flexile hybrid complementary inverter. The input voltage was scanned from 30 to −10 V with supply voltages of 10–30 V. The red lines show the voltage gain characteristics. The , , , and are input and output voltages at high and low levels, respectively. and are determined by where .

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/content/aip/journal/apl/96/26/10.1063/1.3458799
2010-06-30
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3458799
10.1063/1.3458799
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