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Hf–Pd diode: (a) and (b) energy band diagram. (a) Device forward bias and (b) device reverse bias. (c) measured in ambient (squares) and vacuum (circles). Inset: linear scale for comparison. (d) Contrast of in vacuum and ambient.
Mixed-metal devices on 1.7 nm diameter CNT: (a) average vs for three to five devices of each pairing. (b) vs with best fit. Inset shows linear plot of vs .
Reversible polarity diode: (a) vs for , −8, and −20 V. (b) vs at .
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