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(a) Electron microscope image of FIB-deposited superconducting C–Ga–O nanostructure on lithographically defined Ti:Au electrodes on Si substrate. Bracket above the nanowire indicates the region where atomic force microscopy was performed. Scale . (b) AFM topography of the deposited nanostructure revealing the nanotrench due to the FIB process that ablated the surface simultaneous to deposition. Scale . The depth of the trench is estimated to be about 200 nm (vertical arrow).
Superconducting transition in FIB-deposited C–Ga–O nanowire. The temperature dependent resistance is shown from 150 to 2 K. was determined at 90% of the normal state resistance. The inset shows an expanded view of the normal state resistance, accessed by suppressing superconductivity with a 9 T magnetic field (dashed) and overlapping with zero field data. The temperature where the resistance reaches a local maximum, indicating the onset of the superconducting transition, is also indicated.
Temperature dependence of the resistance of a C–Ga–O nanowire in applied magnetic fields between 0 and 9 T, showing the systematic suppression of the resistance decrease consistent with a superconducting state. Inset: normalized to peak values above at each field, indicating a possible onset of fluctuation-induced superconductivity up to 11 K.
Upper critical field vs temperature, , extracted from the data in Fig. 3. The solid line is a fit to the standard pair-breaking model (Ref. 17). Zero temperature critical field, and coherence length, are 8.8 T and 6 nm, respectively. Also shown is a set of data corresponding to the onset temperatures as defined in Fig. 2, indicating what may be a large fluctuation regime, possibly associated with the reduced dimensionality of the nanowire. Dashed line is a guide to the eye.
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