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High power single-lateral-mode operation of InAs quantum dot based ridge type laser diodes by utilizing a double bend waveguide structure
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10.1063/1.3459150
/content/aip/journal/apl/96/26/10.1063/1.3459150
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3459150
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The schematic three-dimensional view of the InAs QD DB waveguide LDs (not to scale) and (b) the schematic 2D top view of a DB waveguide with a ridge width , a transition length , and a lateral offset fabricated on a y-cut z-propagating substrate.

Image of FIG. 2.
FIG. 2.

The normalized power intensity of each mode monitored at the end of DB waveguide.

Image of FIG. 3.
FIG. 3.

The L-I characteristics and lasing spectra with the currents measured from the InAs QD DB waveguide LDs with a -wide stripe and a -long cavity in CW mode at room temperature.

Image of FIG. 4.
FIG. 4.

The far-field patterns measured from the InAs QD DB waveguide LDs with a -wide stripe and a -long cavity in CW mode at room temperature.

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/content/aip/journal/apl/96/26/10.1063/1.3459150
2010-07-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High power single-lateral-mode operation of InAs quantum dot based ridge type laser diodes by utilizing a double bend waveguide structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3459150
10.1063/1.3459150
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