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vs characteristics of a GI type device measured at different (from 0 to −6 V, step −1 V). Continuous line: sweep . Dashed Line: sweep .
Normalized cathodoluminescence spectra on the studied devices at 77 K. The spectra are normalized with respect to the GaN bandedge peak at about 3.45 eV. The YL peak is visible on all the devices affected by the kink. Inset: schematic GaN band diagram indicating: deep donors , deep acceptors , and the YL band transition.
Tested devices on 4H–SiC substrate for different epitaxial growth (Epigrowth) and processing suppliers (Proces.). The last two columns report the presence or absence of the kink in the output I-V curves and the presence or absence of the YL peak in the CL inspection.
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