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Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors
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10.1063/1.3459968
/content/aip/journal/apl/96/26/10.1063/1.3459968
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3459968

Figures

Image of FIG. 1.
FIG. 1.

vs characteristics of a GI type device measured at different (from 0 to −6 V, step −1 V). Continuous line: sweep . Dashed Line: sweep .

Image of FIG. 2.
FIG. 2.

Normalized cathodoluminescence spectra on the studied devices at 77 K. The spectra are normalized with respect to the GaN bandedge peak at about 3.45 eV. The YL peak is visible on all the devices affected by the kink. Inset: schematic GaN band diagram indicating: deep donors , deep acceptors , and the YL band transition.

Tables

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Table I.

Tested devices on 4H–SiC substrate for different epitaxial growth (Epigrowth) and processing suppliers (Proces.). The last two columns report the presence or absence of the kink in the output I-V curves and the presence or absence of the YL peak in the CL inspection.

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/content/aip/journal/apl/96/26/10.1063/1.3459968
2010-07-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3459968
10.1063/1.3459968
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