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Different nonvolatile memory effects in epitaxial heterostructures
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10.1063/1.3460141
/content/aip/journal/apl/96/26/10.1063/1.3460141
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3460141
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD results of scans for PZT films with the thickness of 17, 34, 105, and 160 nm. (b) HRTEM images of 34-nm-thick film.

Image of FIG. 2.
FIG. 2.

Ferroelectric hysteresis loops of PZT films with the thickness of (a) 105 and 160 nm measured at 100 Hz. (b) 17 and 34 nm measured at 2 kHz.

Image of FIG. 3.
FIG. 3.

(a) curves of PZT films measured in a cyclic-sweep mode. The films with the thicknesses of 17 and 34 nm show the counterclockwise hysteresis characteristic. (b) Linear fitting results of curves indicate that the conduction of LRS and HRS are dominated by the same conduction mechanism of Schottky effect plotted in scale, in the voltage region of . The inset shows the Ohmic correlation of both states scaled in , in the low voltage region of .

Image of FIG. 4.
FIG. 4.

Different nonvolatile memory effects are presented by (a) the RS retention property in the 17-nm-thick film and (b) the FE retention characteristic in the 105-nm-thick film, respectively.

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/content/aip/journal/apl/96/26/10.1063/1.3460141
2010-07-02
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Different nonvolatile memory effects in epitaxial Pt/PbZr0.3Ti0.7O3/LSCO heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/26/10.1063/1.3460141
10.1063/1.3460141
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