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(a) XRD results of scans for PZT films with the thickness of 17, 34, 105, and 160 nm. (b) HRTEM images of 34-nm-thick film.
Ferroelectric hysteresis loops of PZT films with the thickness of (a) 105 and 160 nm measured at 100 Hz. (b) 17 and 34 nm measured at 2 kHz.
(a) curves of PZT films measured in a cyclic-sweep mode. The films with the thicknesses of 17 and 34 nm show the counterclockwise hysteresis characteristic. (b) Linear fitting results of curves indicate that the conduction of LRS and HRS are dominated by the same conduction mechanism of Schottky effect plotted in scale, in the voltage region of . The inset shows the Ohmic correlation of both states scaled in , in the low voltage region of .
Different nonvolatile memory effects are presented by (a) the RS retention property in the 17-nm-thick film and (b) the FE retention characteristic in the 105-nm-thick film, respectively.
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