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Wide-band capacitance measurement on a semiconductor double quantum dot for studying tunneling dynamics
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10.1063/1.3285180
/content/aip/journal/apl/96/3/10.1063/1.3285180
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3285180
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic illustration of the experimental setup. The measurements were performed at zero external magnetic field with the device cooled in a dilution refrigerator to an electron temperature of 130 mK. (b) Energy diagrams of the dot and the lead when the applied is high (upper) and low (lower). (c) Schematic of shape of (upper) and the response of (lower). and is the repetition time and the tunneling rate, respectively. (d) as a function of with and . indicates electron number in the right dot. and are fixed at −0.25 and −0.2 V, respectively. (e) as a function of at . The amplitudes of pulse voltages and are 0.44 and 0.56 mV, respectively. The peak marked with an asterisk comes from another local potential minimum.

Image of FIG. 2.
FIG. 2.

(a) as a function of at several with and . The peaks marked with an asterisk come from another local potential minimum. (b) as a function of . The solid lines indicate numerically calculated ones, and the dashed line is a guide for the eyes. (c) as a function of at several with and . (d) GS of as a function of for peak I. The arrows show the minimum points.

Image of FIG. 3.
FIG. 3.

(a) as a function of and at , , , and . Lines A to C indicate the border of the honeycomb structure. The region circled by the dashed line is described in the text. (b) Similar as a function of and at . (c) as a function of the bias offset at several . (d) Schematic energy diagram as a function of the bias offset . , , , and correspond to the energy states of the antibonding, bonding, right-dot, and left-dot, respectively. The direction of the gate sweep is defined as shown in Fig. 3(a). (e) The FWHM of the dip as a function of . The dashed line indicates the fitted linear line.

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/content/aip/journal/apl/96/3/10.1063/1.3285180
2010-01-19
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Wide-band capacitance measurement on a semiconductor double quantum dot for studying tunneling dynamics
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3285180
10.1063/1.3285180
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