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(a) Two edge-on overpressurized He-cracks are seen in a cross-sectional bright-field TEM image (dynamical diffraction condition, overfocus, ) of He-implanted Si at RT (45 keV, ) and annealed at for 900 s. (b) Bright-field TEM image showing the an overview of the microstructure after implantation at (30 keV, ) and annealing ( for 900 s). The inset shows in detail one platelet formed in the stopping range of H ions and the dashed circles highlight the regions of cracks tip interaction.
Cross-sectional bright-field TEM image of the different interactions of crack tips (a) plastic-type interaction resulting in the formation of structural defects. (b) elastic-type interaction showing the deviation of the crack propagation resulting in coalescence.
(a) depicts the interaction parameters from Eqs. (2) and (3), is the crack diameter, their midpoints distance, the interaction angle and the depth separation distance. (b) and (c) are the reduced stress intensity factor and as function of and , respectively.
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