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Silicon-on-diamond material by pulsed laser technique
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10.1063/1.3291043
/content/aip/journal/apl/96/3/10.1063/1.3291043
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3291043
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM images of a bonded silicon (right side) diamond (left side) interface. (a) cross section of a sample; (b) enlarged detail.

Image of FIG. 2.
FIG. 2.

(a) Raman SOD profile (after subtraction of the background) fitted to a sum of a Si pseudo-Voigt profile and an a-Si broad Gaussian, centered at with a sigma.

Image of FIG. 3.
FIG. 3.

FTIR spectra of two SOD points irradiated with 20 pulses per spot (about 1 per pulse). The reference spectrum is taken from literature (see Ref. 21).

Image of FIG. 4.
FIG. 4.

Calculated energy thresholds for melting of silicon (gray solid line) and carbon (black solid line) as functions of pulse width. Effective bonding experiments are represented by the gray squares, the one yielding no adhesion by the black circle. At large pulse widths the two curves tend asymptotically to a square root trend (diffusion term).

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/content/aip/journal/apl/96/3/10.1063/1.3291043
2010-01-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon-on-diamond material by pulsed laser technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3291043
10.1063/1.3291043
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