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SEM images of a bonded silicon (right side) diamond (left side) interface. (a) cross section of a sample; (b) enlarged detail.
(a) Raman SOD profile (after subtraction of the background) fitted to a sum of a Si pseudo-Voigt profile and an a-Si broad Gaussian, centered at with a sigma.
FTIR spectra of two SOD points irradiated with 20 pulses per spot (about 1 per pulse). The reference spectrum is taken from literature (see Ref. 21).
Calculated energy thresholds for melting of silicon (gray solid line) and carbon (black solid line) as functions of pulse width. Effective bonding experiments are represented by the gray squares, the one yielding no adhesion by the black circle. At large pulse widths the two curves tend asymptotically to a square root trend (diffusion term).
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