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Electronic band structure information of GdN extracted from x-ray absorption and emission spectroscopy
1.S. E. Granville, B. J. Ruck, F. Budde, A. Koo, D. J. Pringle, F. Kuchler, A. R. H. Preston, D. H. Housden, N. Lund, A. Bittar, G. V. M. Williams, and H. J. Trodahl, Phys. Rev. B 73, 235335 (2006).
3.B. J. Ruck, in Nanomagnetism and Spintronics, edited by F. Nasirpouri and A. Nogaret (World Scientific, Singapore, 2009).
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5.Electron yield can be measured at the Gd M-edge because the higher energy Auger electrons are able to escape the capping layer.
8.A. R. H. Preston, S. Granville, D. H. Housden, B. Ludbrook, B. J. Ruck, H. J. Trodahl, A. Bittar, G. V. M. Williams, J. E. Downes, A. DeMasi, Y. Zhang, K. E. Smith, and W. R. L. Lambrecht, Phys. Rev. B 76, 245120 (2007).
9.A. R. H. Preston, B. J. Ruck, L. F. J. Piper, A. DeMasi, K. E. Smith, A. Schleife, F. Fuchs, F. Bechstedt, J. Chai, and S. M. Durbin, Phys. Rev. B 78, 155114 (2008).
10.The LuN film was grown by PLD and measured at MAXlab (with GdN). Growth and experimental details for SmN and DyN are found in Ref. 8.
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