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(a) Schematic of the fabricated underlap FET device, (b) S/D profile image by SEM of the underlap-embedded FET, and (c) cross-sectional image of the underlap region and schematic representation of the SBP-AIa and anti-AI binding in the underlap region.
(a) The transfer characteristics of the overlap device at drain biases of 0.05 and 1 V and an underlap device for various underlap lengths at 0.05 V, (b) extracted values of both the underlap and overlap device as a function of the underlap length at drain biases of 0.05 and 1 V. was read at a constant drain current of 100 nA.
(a) The transfer characteristics in each stage of a bioexperiment in a device with an underlap length of 900 nm; the initial underlap device, the immobilization of SBP-AIa, and the binding of anti-AI are shown. The inset is a schematic showing the biomolecule immobilization process in the underlap region and (b) extracted drain current at its initial after each stage of the bioexperiment for various underlap lengths.
Comparative anti-AI results at an underlap length device of 900 nm; a recovery test to break the specific binding, a ssDNA test to prove the negative charge effect, a false-positive test with nonspecific biomolecules of anti-rabbit IgG, the anti-AI without the SBP-AIa, and the PBS without anti-AI test as a negative control experiment were conducted.
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