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An underlap field-effect transistor for electrical detection of influenza
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Image of FIG. 1.
FIG. 1.

(a) Schematic of the fabricated underlap FET device, (b) S/D profile image by SEM of the underlap-embedded FET, and (c) cross-sectional image of the underlap region and schematic representation of the SBP-AIa and anti-AI binding in the underlap region.

Image of FIG. 2.
FIG. 2.

(a) The transfer characteristics of the overlap device at drain biases of 0.05 and 1 V and an underlap device for various underlap lengths at 0.05 V, (b) extracted values of both the underlap and overlap device as a function of the underlap length at drain biases of 0.05 and 1 V. was read at a constant drain current of 100 nA.

Image of FIG. 3.
FIG. 3.

(a) The transfer characteristics in each stage of a bioexperiment in a device with an underlap length of 900 nm; the initial underlap device, the immobilization of SBP-AIa, and the binding of anti-AI are shown. The inset is a schematic showing the biomolecule immobilization process in the underlap region and (b) extracted drain current at its initial after each stage of the bioexperiment for various underlap lengths.

Image of FIG. 4.
FIG. 4.

Comparative anti-AI results at an underlap length device of 900 nm; a recovery test to break the specific binding, a ssDNA test to prove the negative charge effect, a false-positive test with nonspecific biomolecules of anti-rabbit IgG, the anti-AI without the SBP-AIa, and the PBS without anti-AI test as a negative control experiment were conducted.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An underlap field-effect transistor for electrical detection of influenza