1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Electrical properties of C-doped -type GaP and GaPN grown by molecular beam epitaxy
Rent:
Rent this article for
USD
10.1063/1.3291664
/content/aip/journal/apl/96/3/10.1063/1.3291664
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3291664
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Hall mobility for holes in C-doped GaP and GaPN epilayers as a function of hole concentration at RT. The open and filled marks represent the data obtained from unannealed samples and those annealed at for 1 min, respectively.

Image of FIG. 2.
FIG. 2.

Variation in the hole concentration as a function of reciprocal temperature (1/T) in C-doped (a) GaP and (b) GaPN with N contents of 1% and 3%. The values in the legends show the hole concentration at room temperature.

Image of FIG. 3.
FIG. 3.

Variation in the hole mobility as a function of temperature in C-doped (a) GaP and (b) GaPN with N contents of 1% and 3%. The values in the legends show the hole concentration at room temperature.

Loading

Article metrics loading...

/content/aip/journal/apl/96/3/10.1063/1.3291664
2010-01-20
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical properties of C-doped p-type GaP and GaPN grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3291664
10.1063/1.3291664
SEARCH_EXPAND_ITEM