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Surface-energy triggered phase formation and epitaxy in nanometer-thick silicide films
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View: Figures


Image of FIG. 1.
FIG. 1.

Variation in (a) and (b) with RTP temperature for silicidation at different metal thicknesses ( and ). While the Pt-silicide films show an expected annealing behavior, two distinct behaviors are observed for the Ni-silicide films with as the watershed.

Image of FIG. 2.
FIG. 2.

(a) XRD and (b) MRS results for Ni-silicide films formed at with , showing NiSi peaks for the films with and only Si peaks for those with .

Image of FIG. 3.
FIG. 3.

Cross-sectional HRTEM images for (a) a polycrystalline NiSi film formed at with , and epitaxially aligned with formed at (b) and (c) .

Image of FIG. 4.
FIG. 4.

(a) Variation in with RTP temperature and corresponding cross-sectional HR-TEM images for the epitaxially aligned films formed at (b) and (b) , with and 4% Pt in the Ni–Pt alloy.

Image of FIG. 5.
FIG. 5.

Schematic representation of free energy change vs. film thickness for the formation of NiSi, , and . The lower (i.e., more negative) is, the more stable the corresponding phase becomes and is thus more likely to form.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films