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Surface passivation of -type Czochralski silicon substrates by thermal-/plasma-enhanced chemical vapor deposition SiN stacks
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10.1063/1.3291681
/content/aip/journal/apl/96/3/10.1063/1.3291681
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3291681
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Figures

Image of FIG. 1.
FIG. 1.

Effective lifetime, measured at injection level , vs annealing time in air at for -type Cz silicon wafers passivated with thermal-/PECVD-SiN stack. Different curves correspond to the different thicknesses of thermal oxide layer (10, 40, 270, and 330 nm). The effective lifetimes shown are averaged over 5–10 wafers for each oxide thickness.

Image of FIG. 2.
FIG. 2.

Time stability of passivation quality for -type Cz silicon wafers passivated with thermal-oxide/PECVD-SiN stack. The SRVs for the best wafers of available oxide thickness set (10, 40, 270, and 330 nm) are shown for the different treatment steps [(a)–(e)]. See the text for the details.

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/content/aip/journal/apl/96/3/10.1063/1.3291681
2010-01-19
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3291681
10.1063/1.3291681
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