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Mo incorporation in thin film photoanodes: Tailoring the electronic structure for photoelectrochemical hydrogen production
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10.1063/1.3291689
/content/aip/journal/apl/96/3/10.1063/1.3291689
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3291689
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Figures

Image of FIG. 1.
FIG. 1.

Top panel: UPS (left), IPES (top right), and UPS secondary electron “SE” cutoff (bottom right) spectra of presented on a common energy scale relative to the Fermi energy, . The linear approximation of the leading edges (red lines) to determine the VBM and CBM positions as well as the respective values (in eV) are also shown. The scheme shows the respective band diagram. Bottom panel: Schematic representation of the energy levels (Ref. 6 ) (together with the respective values for VBM, CBM, and SE cutoff in eV) for comparison. The uncertainty for the given VBM/CBM and cutoff position is ±0.10 and ±0.05 eV, respectively.

Image of FIG. 2.
FIG. 2.

Left panel: CBM and VBM position presented on an energy scale relative to the Fermi energy , the vacuum level , and the normal hydrogen electrode (NHE). The gray boxes represent the determination uncertainty. For comparison the oxidation and reduction potentials of water are also shown. Right panel: energy levels of relative to the NHE (according to Ref. 6 ).

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/content/aip/journal/apl/96/3/10.1063/1.3291689
2010-01-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mo incorporation in WO3 thin film photoanodes: Tailoring the electronic structure for photoelectrochemical hydrogen production
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3291689
10.1063/1.3291689
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