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Peak optical power and voltage vs current density characteristics of a RCSE QCL with a grating period of at different temperatures. The inset shows a scanning electron microscopy image of a waveguide section holding the DFB gratings.
Emitted light and voltage vs current density curves of a RCSE and FP QCL at a temperature of 293 K. The geometry of the FP emitter is , which gives an area comparable to RCSE QCLs (with a radius of and a width of ).
(a) Single-mode spectrum of a device with taken at a current density of and 293 K. (b) Surface emission single-mode spectra recorded at different temperatures for a grating period of . (c) Linear tuning of the resonance by means of five different grating periods. The inset illustrates the corresponding optical power curves.
Measured (left half) and simulated (right half) surface emission far-field pattern. The far fields are concentric with respect to device axis, and are represented by one half only. The angular position is given by sin , where is the angle between the device center and the free-space wave vector, is the diffraction order, is free-space wavelength, and is the device diameter. Inset shows a three-dimensional representation of the recorded data.
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