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Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells
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View: Figures


Image of FIG. 1.
FIG. 1.

Transmission electron microscopy images of a yellow-emitting QW. (a) Dark field image with . (b) High resolution image of all five QWs and (c) high resolution image of top two QWs.

Image of FIG. 2.
FIG. 2.

CL of the QW measured in the temperature range from 5 to 300 K. (a) Normalized spectra taken at temperatures specified on the right. (b) Plot of the QW emission peak energy vs temperature.

Image of FIG. 3.
FIG. 3.

TRCL transients for the peak emission energy at 5, 100, and 300 K. The electron beam is switched on at and off at , with a repletion rate of 1 MHz.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the integrated luminescence intensity and of the lifetime of carrier recombination processes. (a) Arrhenius plot of the integrated QW emission intensity; the curved line represents the fit of data using Eq. (3), with . (b) Plot of the CL lifetime, the radiative lifetime, and the nonradiative lifetime across the temperature range. The CL lifetimes were obtained by fitting the transients with exponential decay functions. The radiative and nonradiative lifetimes were derived from Eqs. (1) and (2).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells