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Sol-gel deposition and piezoelectric properties of {110}-oriented thin films
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10.1063/1.3293446
/content/aip/journal/apl/96/3/10.1063/1.3293446
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3293446
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD pattern of (a) ST bottom layer and the evolution of (110)–orientation in PZT as a function of increasing film thickness (b) , (c) , and (d) . on ST/Pt/Ti//Si. Inset shows the XRD of the PZT film without ST intermediate layer on Pt (111)/Ti//Si substrate.

Image of FIG. 2.
FIG. 2.

HRSEM of the cross section of PZT thin film on ST/Pt/Ti//Si showing columnar grain growth.

Image of FIG. 3.
FIG. 3.

(a) P-E hysteresis loop and (b) leakage current of PZT thin film on ST/Pt/Ti//Si.

Image of FIG. 4.
FIG. 4.

(a) Tip displacement of PZT/Si. unimorph cantilever and as a function of applied unipolar voltage and (b) tip displacement under bipolar voltage excitation.

Image of FIG. 5.
FIG. 5.

A Possible orientations of polarization vectors in (110)-oriented (a) tetragonal and (b) rhombohedral PZT film.

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/content/aip/journal/apl/96/3/10.1063/1.3293446
2010-01-22
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sol-gel deposition and piezoelectric properties of {110}-oriented Pb(Zr0.52Ti0.48)O3 thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3293446
10.1063/1.3293446
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