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XRD pattern of (a) ST bottom layer and the evolution of (110)–orientation in PZT as a function of increasing film thickness (b) , (c) , and (d) . on ST/Pt/Ti//Si. Inset shows the XRD of the PZT film without ST intermediate layer on Pt (111)/Ti//Si substrate.
HRSEM of the cross section of PZT thin film on ST/Pt/Ti//Si showing columnar grain growth.
(a) P-E hysteresis loop and (b) leakage current of PZT thin film on ST/Pt/Ti//Si.
(a) Tip displacement of PZT/Si. unimorph cantilever and as a function of applied unipolar voltage and (b) tip displacement under bipolar voltage excitation.
A Possible orientations of polarization vectors in (110)-oriented (a) tetragonal and (b) rhombohedral PZT film.
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