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Electron trap memory characteristics of film/AlGaN/GaN heterostructure
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View: Figures


Image of FIG. 1.
FIG. 1.

XRD pattern of the LNO film/AlGaN/GaN heterostructure prepared on a sapphire. The inset is the surface morphology image of the LNO film.

Image of FIG. 2.
FIG. 2.

(a) memory window characteristics of the LNO/AlGaN/GaN heterostructure in different bias range. (b) The dependence of the memory window on frequency. (c) The dependence of the and on bias. (d) curve of the LNO/AlGaN/GaN heterostructure. The inset is the replot of the curve with FN tunneling mechanism.

Image of FIG. 3.
FIG. 3.

(a) Electron retention characteristics of the heterostructure at RT and . The heterostructure was stressed for 10 s at −30 and 10 V, respectively. (b) The endurance of the memory effect after .

Image of FIG. 4.
FIG. 4.

The schematic diagram of the energy band corresponding to the operating mechanism of the (a) writing under large negative bias and the (b) erasing processes under positive bias for the LNO/AlGaN/GaN heterostructure. The energy gap of LNO, AlGaN, and GaN is 3.9, 3.9, and 3.4 eV, and the electron affinity is 1.1, 2.9, and 3.3 eV, respectively. The activation energy of the Li-vacancies in LNO is 0.93 eV.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron trap memory characteristics of LiNbO3 film/AlGaN/GaN heterostructure