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Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers
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10.1063/1.3295705
/content/aip/journal/apl/96/3/10.1063/1.3295705
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3295705

Figures

Image of FIG. 1.
FIG. 1.

PL spectra near measured at 300 K for GaN:Er epilayers grown on different templates.

Image of FIG. 2.
FIG. 2.

XRD spectra for GaN:Er layers grown on different templates. The diffraction peaks shifted to smaller angle relative to (c-GaN position).

Image of FIG. 3.
FIG. 3.

PL intensity of emission vs the biaxial stress of GaN:Er layers grown on different templates.

Tables

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Table I.

The parameters for GaN:Er layers grown on different templates: lattice constant , FWHM of (002) rocking curve, biaxial stress , and at .

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/content/aip/journal/apl/96/3/10.1063/1.3295705
2010-01-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3295705
10.1063/1.3295705
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