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Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers
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10.1063/1.3295705
/content/aip/journal/apl/96/3/10.1063/1.3295705
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3295705
/content/aip/journal/apl/96/3/10.1063/1.3295705
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/content/aip/journal/apl/96/3/10.1063/1.3295705
2010-01-21
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/3/10.1063/1.3295705
10.1063/1.3295705
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