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Low hole effective mass in thin InAs nanowires
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10.1063/1.3280048
/content/aip/journal/apl/96/4/10.1063/1.3280048
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3280048
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Optimized atomic geometry of the InAs NWs aligned along the (a) [111] direction of zinc blende structure, (b) [0001], and (c) directions of wurtzite structure. The bigger (gray) balls represent the In atoms, the medium (orange) balls represent the As atoms, and the smaller ones represent the H atoms.

Image of FIG. 2.
FIG. 2.

Band structure of the InAs NWs aligned along the [111] direction of zinc blende phase with diameters of (a) 1.32, nm (b) 1.82 nm, and (c) 2.32 nm; [0001] wurtzite with diameters of (d) 0.83 nm, (e) 1.62 nm, and (f) 2.46 nm; and wurtzite with diameters of (g) 1.54 nm, (h) 2.33 nm, and (i) 3.12 nm.

Image of FIG. 3.
FIG. 3.

Difference between the level at the VBM and the level just below in energy, as a function of the InAs NW diameters for the [111] zinc blende, [0001] and wurtzite phases.

Image of FIG. 4.
FIG. 4.

Electron (top) and hole (bottom) effective masses for the three phases of the InAs NWs as a function of the diameter. The dashed horizontal lines indicate the respective experimental bulk effective masses (Ref. 24).

Image of FIG. 5.
FIG. 5.

Hole (top) and electron (bottom) mobilities for the three phases of InAs NWs as a function of the diameter. The reference bulk electron and hole mobilities have been taken as that of low temperature and , respectively.

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/content/aip/journal/apl/96/4/10.1063/1.3280048
2010-01-26
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low hole effective mass in thin InAs nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3280048
10.1063/1.3280048
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