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Gigahertz characterization of a single carbon nanotube
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View: Figures


Image of FIG. 1.
FIG. 1.

Measurement structure: (a) top view of Wheatstone bridge and synoptic of the measurement set-up; (b) Cross section of the SWNT structure under test; (c) SEM picture of one SWNT onto APTS zone and connected by Pd/Au at its extremities.

Image of FIG. 2.
FIG. 2.

Measurement of total dc resistance vs bias voltage, as a function of gate voltage.

Image of FIG. 3.
FIG. 3.

Impedance response of SWNT vs frequency in term of magnitude (a) and phase (b). Measured impedance (points) and calculated impedance derivate from equivalent circuit (line).

Image of FIG. 4.
FIG. 4.

Extraction of small signal equivalent circuit of metallic SWNT derived from measurement at high frequency: (a) Illustration of equivalent circuit and extraction of resistance , (b) extraction of inductance: is obtained at HF as illustrated in the inset.

Image of FIG. 5.
FIG. 5.

Extraction of small signal equivalent circuit of SWNT contact parameters at low frequency: (a) Extraction of contact resistance , (b) extraction of capacitance . The insets illustrated area of extraction. Beyond the cut-off frequency, extractions are not significant.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gigahertz characterization of a single carbon nanotube