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Measurement structure: (a) top view of Wheatstone bridge and synoptic of the measurement set-up; (b) Cross section of the SWNT structure under test; (c) SEM picture of one SWNT onto APTS zone and connected by Pd/Au at its extremities.
Measurement of total dc resistance vs bias voltage, as a function of gate voltage.
Impedance response of SWNT vs frequency in term of magnitude (a) and phase (b). Measured impedance (points) and calculated impedance derivate from equivalent circuit (line).
Extraction of small signal equivalent circuit of metallic SWNT derived from measurement at high frequency: (a) Illustration of equivalent circuit and extraction of resistance , (b) extraction of inductance: is obtained at HF as illustrated in the inset.
Extraction of small signal equivalent circuit of SWNT contact parameters at low frequency: (a) Extraction of contact resistance , (b) extraction of capacitance . The insets illustrated area of extraction. Beyond the cut-off frequency, extractions are not significant.
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