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The absorption of (a) P3HT:PCBM layer with thickness of 250 nm (solid square), 710 nm (empty square), (solid circle), (empty circle), and (solid triangle). (b) P3HT layer (empty triangle), PCBM layer (solid star), and 180 nm PCBM (empty star).
EQE and AFM images of the devices with different thicknesses (a) 250 nm, (b) 710 nm, (c) , (d) , and (e) . (f) Dark current density of devices.
Calculated recombination rate in the device in the visible range. The calculated recombination rate in the infrared range is shown in the inset.
Transient response of the photodetector with active layer under (a) 20 Hz and (b) 10 kHz.
Calculated total currents and recombination currents of 250 nm and devices.
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