No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Understanding the role of tunneling barriers in organic spin valves by hard x-ray photoelectron spectroscopy
5.V. Dediu, L. E. Hueso, I. Bergenti, A. Riminucci, F. Borgatti, P. Graziosi, C. Newby, F. Casoli, M. P. De Jong, C. Taliani, and Y. Zhan, Phys. Rev. B 78, 115203 (2008).
10.C. Dallera, F. Fracassi, L. Braicovich, G. Scarel, C. Wiemer, M. Fanciulli, G. Pavia, and B. C. C. Cowie, Appl. Phys. Lett. 89, 183521 (2006).
11.Y. Q. Zhan, X. J. Liu, E. Carlegrim, F. H. Li, I. Bergenti, P. Graziosi, V. Dediu, and M. Fahlman, Appl. Phys. Lett. 94, 053301 (2009).
12.P. Torelli, M. Sacchi, G. Cautero, M. Cautero, B. Krastanov, P. Lacovig, P. Pittana, R. Sergo, R. Tommasini, A. Fondacaro, F. Offi, G. Paolicelli, G. Stefani, M. Grioni, R. Verbeni, G. Monaco, and G. Panaccione, Rev. Sci. Instrum. 76, 023909 (2005).
13.TEM was performed on an FEI Technai F20 transmission electron microscope operated at 200 kV and equipped with a field emission gun. Cross-section samples were prepared by a solvent-free process using an FEI Nova 200 Dualbeam Focused Ion Beam system, which was also used to deposit a thin Pt layer onto the sample prior to milling and lift-out.
16.T. D. Thomas, E. Kukk, R. Sankari, H. Fukuzawa, G. Prümper, K. Ueda, R. Püttner, J. Harries, Y. Tamenori, T. Tanaka, M. Hoshino, and H. Tanaka, J. Chem. Phys. 128, 144311 (2008).
20.A. Curioni, W. Andreoni, R. Treusch, F. J. Himpsel, E. Haskal, P. Seider, C. Heske, S. Kakar, T. van Buuren, and L. J. Terminello, Appl. Phys. Lett. 72, 1575 (1998).
Article metrics loading...
We present an ex situ, nondestructive chemical characterization of deeply buried organic-inorganic interfaces using hard x-ray photoelectron spectroscopy. and interfaces were studied in order to determine the role of a thin (1–2 nm) interdiffusion barrier in organic spin valves. Interfacial , 15 nm below the surface, exhibits strong sensitivity to the electronic structure of the interfacial region and to the presence of the . In addition to reducing interdiffusion, we find that the barrier prevents charge donation from the Co to the interfacial , thus preventing the formation of anions within the interface region.
Full text loading...
Most read this month