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Energy-band alignment of and HfAlO gate dielectrics deposited by atomic layer deposition on
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10.1063/1.3291620
/content/aip/journal/apl/96/4/10.1063/1.3291620
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3291620
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS spectra for (a) core level and (b) core level from thick (bulk) and HfAlO films.

Image of FIG. 2.
FIG. 2.

Determination of valence band offset at interface using XPS. (a) core level spectra from clean SiC and thin samples, (b) core level spectra from thin and bulk samples, and (c) Valence band spectra from clean SiC and bulk samples.

Image of FIG. 3.
FIG. 3.

Determination of valence band offset at HfAlO/SiC interface using XPS. (a) core level spectra from clean SiC and thin HfAlO/SiC samples, (b) core level spectra from thin HfAlO/SiC and bulk HfAlO samples, and (c) Valence band spectra from clean SiC and bulk HfAlO samples.

Image of FIG. 4.
FIG. 4.

(a) XPS energy loss spectra from bulk and HfAlO films as well as sapphire substrate for determination of the energy band gap (b) Energy band diagram of and constructed using valence band offset and band gap values as determined by XPS.

Image of FIG. 5.
FIG. 5.

Capacitance-voltage and frequency dispersion characteristics of MOS capacitors on with (a) 115 Å of and (b) 115 Å of HfAlO. The insets to (a) and (b) are plots of gate leakage current density vs the effective electric field . was calculated using where is the flatband voltage.

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/content/aip/journal/apl/96/4/10.1063/1.3291620
2010-01-28
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3291620
10.1063/1.3291620
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