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Resistivity dominated by surface scattering in sub-50 nm Cu wires
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10.1063/1.3292022
/content/aip/journal/apl/96/4/10.1063/1.3292022
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3292022
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Comparison of resistivity in narrow lines, as calculated from both the surface scattering model [lines, Eq. (1)] and the simple model [points, Eq. (2)] for line thicknesses between 10 and 100 nm and aspect ratios between 0.25 and 4.

Image of FIG. 2.
FIG. 2.

EBSD data of large grains and correlated grain orientation in three adjacent Cu lines with widths (from left) 45, 40, 35, 30, and 25 nm and with a Ta barrier. Line colors correspond to the orientation normal to the sample surface, according to the triangle.

Image of FIG. 3.
FIG. 3.

Resistivities of 100 nm thick Cu lines determined by resistance measurements (points) at compared with the resistivity models for phonon and surface scattering [dotted, Eq. (2)], the added impact of area variations [solid, Eq. (3)], and the resistivity of bulk Cu (dashed).

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/content/aip/journal/apl/96/4/10.1063/1.3292022
2010-01-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistivity dominated by surface scattering in sub-50 nm Cu wires
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3292022
10.1063/1.3292022
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