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Characterization of random telegraph noise in gate induced drain leakage current of - and -type metal-oxide-semiconductor field-effect transistors
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10.1063/1.3292204
/content/aip/journal/apl/96/4/10.1063/1.3292204
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3292204
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

1/f noise power spectral densities and corresponding RTN in GIDL currents of and measured at a fixed of . Upper inset represents fluctuation measured from 60 nm at and . The source bias is 0 V. Lower inset represents fluctuation measured from 60 nm at and . Both devices show RTN in GIDL current.

Image of FIG. 2.
FIG. 2.

Left and right windows in figure (a) show the dependence of and on the gate voltage in and , respectively. Insets in left and right windows represent schematically the energy band diagram to explain capture probability of a hole and an electron with the gate voltage, respectively. Left and right windows in figure (b) stand for the dependence of on for GIDL current in and , respectively. Dashed lines in figure (b) represent linear fitting curves to obtain the depth of trap from the interface between the oxide and drain.

Image of FIG. 3.
FIG. 3.

The dependence of and on the temperature in samples shown in Fig. 2. The activation energies are extracted for and of both devices.

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/content/aip/journal/apl/96/4/10.1063/1.3292204
2010-01-26
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3292204
10.1063/1.3292204
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