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Characterization of random telegraph noise in gate induced drain leakage current of - and -type metal-oxide-semiconductor field-effect transistors
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10.1063/1.3292204
/content/aip/journal/apl/96/4/10.1063/1.3292204
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3292204
/content/aip/journal/apl/96/4/10.1063/1.3292204
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/content/aip/journal/apl/96/4/10.1063/1.3292204
2010-01-26
2014-10-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3292204
10.1063/1.3292204
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