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Physical device modeling of carbon nanotube/GaAs photovoltaic cells
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) An atomic force microscopy image of a typical device. “G,” “S,” and “D” represent the gate, source, and drain electrodes, respectively. The green arrow delineates the SWNT-channel. (b) Logarithm of SWNT-channel conductance vs gate voltage .

Image of FIG. 2.
FIG. 2.

(a) vs curves from 50 to 300 K. (b) slope of the linear portion of vs curves at different temperatures at the low FB (red open squares), high FB (red open diamonds) and RB (blue open circles), respectively. (c) -dependent activation energies of the SWNT/GaAs heterojunction (red open squares) and the SWNT/Au contact (black open circles), respectively. (d) Schematic energy band diagram of the SWNT/GaAs heterojunction. The purple area delineates the inversion layer.

Image of FIG. 3.
FIG. 3.

(a) Logarithmic plot of the measured (symbols) and calculated (lines) temperature-dependent vs . Inset: schematic energy band diagrams under low and high FB, respectively. (b) Measured (symbols) and calculated (lines) vs under RB at 75, 125, and 300 K, respectively. For clarity, the curves for 125 and 75 K are shifted downwards by 2.5 and 5 units, respectively. Inset: schematic energy band diagrams under low and high RB, respectively. (c) with and without illumination at 300 K. and represent the short-circuit current and open-circuit voltage, respectively. Inset: dc equivalent circuit of the SWNT/GaAs p-n heterojunction with illumination. and are the Au/SWNT contact and shunt resistances, respectively. is a constant current source. (d) Measured (symbols) and calculated (lines) data under illumination at 50, 125, 200, and 300 K, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical device modeling of carbon nanotube/GaAs photovoltaic cells