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Surface segregation at the aluminum interface of poly(3-hexylthiophene)/fullerene solar cells
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Figures

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FIG. 1.

Log plots of the current density of the preannealed device (●) and postannealed device (○) in the dark against voltage. The solid lines are fitted to the points with Eq. (1).

Image of FIG. 2.

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FIG. 2.

The XPS spectra of obtained from the top of P3HT/PCBM blend films.

Image of FIG. 3.

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FIG. 3.

The schematic illustration of surface segregation of P3HT/PCBM blend films (left) and the energy diagrams and major recombination interface (right). (a) Preannealed device and (b) postannealed device. The white and gray areas represent P3HT and PCBM domains, respectively.

Tables

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Table I.

Device performances and characteristics parameters of P3HT/PCBM solar cells.

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Table II.

Atomic and weight ratios of the surface composition in P3HT/PCBM blend films.

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/content/aip/journal/apl/96/4/10.1063/1.3294290
2010-01-26
2014-04-17

Abstract

The effects of thermal annealing before and after Aldeposition on poly(3-hexylthiophene) butyric acid methyl ester (PCBM) blend solar cells were investigated by current density-voltage measurements and x-ray photoelectron spectroscopy(XPS). Compared to the preannealed device, the postannealed device exhibited enhanced open-circuit voltage , which is ascribed to the decrease in the reverse saturation current density . The XPS measurements demonstrated that P3HT is dominant at the Al interface in the preannealed device while PCBM is instead dominant in the postannealed device. This surface-segregated PCBM formed in the postannealed device can serve as a hole-blocking layer at the Al interface to reduce , and therefore improve .

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Scitation: Surface segregation at the aluminum interface of poly(3-hexylthiophene)/fullerene solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3294290
10.1063/1.3294290
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