Full text loading...
(a) Illustration of the junction structure. (b) Low magnification and (c) high resolution TEM cross-sectional view of the trilayer structure. The epitaxial relationship is and . (d) and (e) characteristics of a junction at 4.2 and 20 K. The arrows indicate the direction of current sweep at 4.2 K. (inset) The temperature dependence of the sum of energy gaps of both electrodes (symbols) compared to the Bardeen-Cooper-Schrieffer theory (line). Subgap peak positions for 20 K are indicated.
(a) modulation by applied magnetic field at temperatures from 4.2 to 37 K (symbols) compared to the and theoretical Fraunhofer pattern (line) and (b) curves under 17.047 GHz microwave radiation for a junction. (c) The microwave power dependence of the Shapiro steps for from 0 to 5.
Measurement of the MgO barrier thickness by (a) RBS spectrum (squares, 3.05 MeV, ) and simulation (thick line) of an trilayer, suggesting a well defined 1.6-nm-thick MgO layer sandwiched between the electrodes, and by (b) the Fiske steps indicated by arrows on the curve of a junction under 0.1 mT field at 4.2 K with the MgO barrier thickness calculated to be about 1.2 nm.
(a) at 4.2 K for junctions of difference sizes on nine chips with Au or interconnection and MgO barrier thickness varying from 0.8 to 1.8 nm. (b) and curve (inset) of a high junction at 4.2 K. (c) Normalized of various junctions (solid lines) compared to the theoretical calculation for -axis Josephson tunnel junction (dashed line). (d) of two -axis (J1, J2) and one 8°-tilted (J3) junctions.
Article metrics loading...