Full text loading...
curves of Pt//metal/Pt, without metal (a), (b), (c), (d); (e), and (f).
Profile of in virgin Pt//Pt (a); band structure and equivalent circuit of /Pt interface [: stoichiometriclike (b) and heavily reduced (c)].
Dependence of rectifying characteristic on TE metals [the signed range indicates promising metals for switch application, especially rectifying switch (Ref. 5)].
Barrier height vs electronegativity of metals deposited on -type semiconductors including (results in the present work), Si and (Refs. 18 and 19).
Article metrics loading...