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(a) Cross-sectional HRTEM image of the stack of an epitaxial InN film on GaN along the projection; (b) The corresponding FFTs of (a), where the solid and dashed lines denote the Bragg diffractions from the InN layer and the GaN layer, respectively; (c) The enlarged HRTEM image at the InN/GaN interface. The symbol “T” labels the misfit dislocations at the heterointerface.
Coherent phonon spectroscopy of a 3 nm InN thin film; (a) A typical TRSHG curve, where AC denotes the autocorrelation signal (blue dashed line); (b) the time differential of the TRSHG curve is taken to remove the slow time-varying electronic response in the background and preserve the oscillatory component; (c) Fourier power spectrum of the oscillatory component in (b) reveals two coherent phonon modes: GaN phonon at 22.3 THz and InN phonon at 17.8 THz.
Coherent phonon spectroscopy of six samples: (a) bulk InN , (b) InN/GaN, (c) InN/AlN, (d) InN/AlN, (e) InN/GaN, and (f) bulk GaN. Their Fourier power spectra are normalized and offset for comparison.
The conversion efficiency, , of phonon and plasmon coupling is plotted as a function of the InN film thickness. The inset shows the estimation of energy splitting, , as a function of InN layer thickness. The blue dashed line indicates the energy level of phonon at 74 meV.
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