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High figure-of-merit ultrathin metal transparent electrodes incorporating a conductive grid
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10.1063/1.3299259
/content/aip/journal/apl/96/4/10.1063/1.3299259
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3299259

Figures

Image of FIG. 1.
FIG. 1.

Fabrication steps for a G-UTMF.

Image of FIG. 2.
FIG. 2.

(a) and (b) show the microscopic and macroscopic view, respectively, of a G-UTMF based TE, and (c) a drawing of the grid pattern.

Image of FIG. 3.
FIG. 3.

(a) Sheet resistance of G-UTMF as a function of linewidth for different grid spacings (fixed ). Inset is the variation in transparency against the filling factor. (b) Sheet resistance of G-UTMF as a function of filling factor for different grid Ni thickness (fixed ). The dotted lines in the figures correspond to the calculated optimum filling factor.

Image of FIG. 4.
FIG. 4.

Comparison of optical transparency for UTMF (2 nm Ni), G-UTMF (2 nm Cu grid), and 100 nm ITO. The corresponding sheet resistances are also indicated in the figure. The substrate contribution is taken into account in optical transmittance measurements as , where is the deposited film transparency, is the total optical transmittance (film and substrate), and is the substrate optical transmittance.

Tables

Generic image for table
Table I.

Comparison of experimental results with calculated theoretical values for different ratios. Note that both UTMF and grid are made of Ni.

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/content/aip/journal/apl/96/4/10.1063/1.3299259
2010-01-29
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High figure-of-merit ultrathin metal transparent electrodes incorporating a conductive grid
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3299259
10.1063/1.3299259
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