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Fabrication steps for a G-UTMF.
(a) and (b) show the microscopic and macroscopic view, respectively, of a G-UTMF based TE, and (c) a drawing of the grid pattern.
(a) Sheet resistance of G-UTMF as a function of linewidth for different grid spacings (fixed ). Inset is the variation in transparency against the filling factor. (b) Sheet resistance of G-UTMF as a function of filling factor for different grid Ni thickness (fixed ). The dotted lines in the figures correspond to the calculated optimum filling factor.
Comparison of optical transparency for UTMF (2 nm Ni), G-UTMF (2 nm Cu grid), and 100 nm ITO. The corresponding sheet resistances are also indicated in the figure. The substrate contribution is taken into account in optical transmittance measurements as , where is the deposited film transparency, is the total optical transmittance (film and substrate), and is the substrate optical transmittance.
Comparison of experimental results with calculated theoretical values for different ratios. Note that both UTMF and grid are made of Ni.
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