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Development of a tunable donor quantum dot in silicon
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10.1063/1.3299726
/content/aip/journal/apl/96/4/10.1063/1.3299726
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3299726
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Filled state STM image of the quantum dot after the lithographic patterning stage, showing the source (S), drain (D) and the in-plane plunger gate (PG) terminals. (b) Leakage curve from the plunger gate to the S/D terminals. (c) curve across the quantum dot with PG floating.

Image of FIG. 2.
FIG. 2.

Electronic transport characteristics of the quantum dot. Before top-gate deposition: (a) conductance of the dot as a function of the PG voltage, (b) at conduction valley and conduction peak, and (c) two-dimensional (2D) map of conductance of the dot as a function of SD bias and in-plane gate voltage, with dotted lines showing charge rearrangement events. With top-gate voltage : (d) as a function of . The inset shows the fitting (red curve) of the oscillations in the shaded region using classical CB theory, (e) at conduction valley and conduction peak, and (f) 2D map of conductance of the dot as a function of and . The dotted lines again show the charge rearrangement events, and the black lines show the diamond from which is extracted.

Image of FIG. 3.
FIG. 3.

(a) Leakage curve from the plunger gate to the S/D terminals at different . The dotted line defines the operating region of the gate with (b) PG gating range extracted from (a) vs dependency. (c) as a function of at floating . The inset shows the periodic nature of the oscillations.

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/content/aip/journal/apl/96/4/10.1063/1.3299726
2010-01-28
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Development of a tunable donor quantum dot in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/4/10.1063/1.3299726
10.1063/1.3299726
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