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Microscopic simulation of nonequilibrium features in quantum-well pumped semiconductor disk lasers
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View: Figures


Image of FIG. 1.
FIG. 1.

Calculated absorption spectra for linear absorption (shaded area) and for laser densities (, solid line) and a carrier temperature of 305 K. The blue lines indicate the energetical position and strength for the different dipole transitions between electron- and hole- bands. The actual absorption peaks appear slightly shifted due to the exciton binding energy.

Image of FIG. 2.
FIG. 2.

Steady state VECSEL carrier temperatures and densities for . The black solid line depicts the plasma temperature , the black dotted line the hole temperature , the black dashed line the electron temperature and the carrier density is shown as a gray solid line. In the inset, the emission intensity is shown for (gray line), (dashed line), and (black solid line).

Image of FIG. 3.
FIG. 3.

Linear absorption spectrum for and . There, the solid line represents the full nonequilibrium result, while the dashed line corresponds to a FD-distribution with the same mean energy per particle as the full calculation. The shaded area is the simulation of an equilibrium calculation with .

Image of FIG. 4.
FIG. 4.

Emitted power (a), plasma temperature (b), and carrier density (c) for a quantum well pumped VECSEL with (solid line) and 1.294 eV (dashed line) as function of the incident pump power. In (a), the power characteristics for equilibrium carrier distributions with are shown for comparison. There, the solid gray line corresponds to and the shaded area to 1.294 eV.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microscopic simulation of nonequilibrium features in quantum-well pumped semiconductor disk lasers