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A study of resistive switching effects on a thin transition layer produced at the oxide/iron interface of -contented electrode structures
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10.1063/1.3294632
/content/aip/journal/apl/96/5/10.1063/1.3294632
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/5/10.1063/1.3294632
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Figures

Image of FIG. 1.
FIG. 1.

(a) Comparison of AES depth profiles of Fe and O between and stacked layers. (b) XPS spectra of the transition region in the structure. features for metallic Fe at 707.3 eV, FeO at 709.8 eV, at 710.4 eV and at 711.4 eV were assigned.

Image of FIG. 2.
FIG. 2.

50 cycles of bipolar switching behaviors of (a) and (b) structures with compliance current 5 mA. The arrows indicate voltage sweeping directions.

Image of FIG. 3.
FIG. 3.

Linear fitting results of log-log scale in (a) negative voltage region and (b) positive voltage region for the structure. The inset of Figs. 3(a) and 3(b) shows a plot of current vs temperature and a plot of vs at voltage higher than in HRS, respectively. The arrows indicate voltage sweeping directions.

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/content/aip/journal/apl/96/5/10.1063/1.3294632
2010-02-02
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/5/10.1063/1.3294632
10.1063/1.3294632
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