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Enhanced optical power and low forward voltage of GaN-based light-emitting diodes with Ga-doped ZnO transparent conducting layer
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10.1063/1.3298644
/content/aip/journal/apl/96/5/10.1063/1.3298644
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/5/10.1063/1.3298644
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transmittance of annealed ZnO:Ga, ITO, and Ni/Au films.

Image of FIG. 2.
FIG. 2.

I-V curves for GaN LEDs with ITO, Ni/Au, and ZnO:Ga before and after thermal annealing.

Image of FIG. 3.
FIG. 3.

(a) XRD curves of ZnO:Ga films on -sapphire, (b) ZnO:Ga/GaN/-sapphire before thermal annealing, (c) ZnO:Ga/GaN/-sapphire after thermal annealing, (d) core-level XPS spectra for as-grown -GaN surface and a -GaN surface after removal of annealed ZnO:Ga films.

Image of FIG. 4.
FIG. 4.

Light output power as a function of injection current for GaN LEDs with ITO, Ni/Au, and ZnO:Ga after thermal annealing.

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/content/aip/journal/apl/96/5/10.1063/1.3298644
2010-02-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced optical power and low forward voltage of GaN-based light-emitting diodes with Ga-doped ZnO transparent conducting layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/5/10.1063/1.3298644
10.1063/1.3298644
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