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Wavelength-stable cyan and green light emitting diodes on nonpolar -plane GaN bulk substrates
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10.1063/1.3299257
/content/aip/journal/apl/96/5/10.1063/1.3299257
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/5/10.1063/1.3299257

Figures

Image of FIG. 1.
FIG. 1.

EL properties of -plane cyan and green GaInN/GaN LEDs samples at : (a) emission spectra and (b) partial LOP as measured through the substrate. Emission wavelengths are very uniform within each sample except for sample G.

Image of FIG. 2.
FIG. 2.

Current dependent EL characteristics of -plane cyan and green GaInN/GaN LEDs: (a) partial LOP and (b) dominant wavelength.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM micrographs of -plane LEDs with dominant wavelength of (a) 483 nm (sample D), and (b) 516 nm (sample G).

Tables

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Table I.

Summary of -plane GaInN/GaN MQW and LED samples: : InN-fraction in QW ; : QW thickness ; : peak wavelength in PL for MQW and dominant wavelength in EL for LED (with variation within wafer).

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/content/aip/journal/apl/96/5/10.1063/1.3299257
2010-02-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/5/10.1063/1.3299257
10.1063/1.3299257
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