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EL properties of -plane cyan and green GaInN/GaN LEDs samples at : (a) emission spectra and (b) partial LOP as measured through the substrate. Emission wavelengths are very uniform within each sample except for sample G.
Current dependent EL characteristics of -plane cyan and green GaInN/GaN LEDs: (a) partial LOP and (b) dominant wavelength.
Cross-sectional TEM micrographs of -plane LEDs with dominant wavelength of (a) 483 nm (sample D), and (b) 516 nm (sample G).
Summary of -plane GaInN/GaN MQW and LED samples: : InN-fraction in QW ; : QW thickness ; : peak wavelength in PL for MQW and dominant wavelength in EL for LED (with variation within wafer).
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