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Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers
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10.1063/1.3300840
/content/aip/journal/apl/96/5/10.1063/1.3300840
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/5/10.1063/1.3300840
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Figures

Image of FIG. 1.
FIG. 1.

(a) Potential profiles and the wave functions of the first conduction subband (C1) and the first valence subband (HH1) at zone center, (b) transition wavelength as a function of the In composition in , and (c) transition wavelength as a function of the As composition in of type-II InGaN/GaNAs/GaN QW structures.

Image of FIG. 2.
FIG. 2.

(a) C1-HH1 transition energy as a function of the sheet carrier density and (b) the optical matrix elements as a function of of type-II InGaN/GaNAs/GaN QW structures.

Image of FIG. 3.
FIG. 3.

(a) Optical gain spectra and (b) optical gain peak as a function of the sheet carrier density of type-II InGaN/GaNAs/GaN QW structures.

Image of FIG. 4.
FIG. 4.

Differential gain as a function of the current density of type-II InGaN/GaNAs/GaN QW structures.

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/content/aip/journal/apl/96/5/10.1063/1.3300840
2010-02-02
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/5/10.1063/1.3300840
10.1063/1.3300840
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