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Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes
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10.1063/1.3302458
/content/aip/journal/apl/96/5/10.1063/1.3302458
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/5/10.1063/1.3302458
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Room temperature PL spectra of LED A and LED B (inset: high resolution x-ray diffraction scans for the GaN (0002) reflection of LED A and LED B), (b) PL spectra of LED A before and after RTA, (c) PL spectra of LED B before and after RTA.

Image of FIG. 2.
FIG. 2.

Integrated PL intensities as a function of for LED A and LED B.

Image of FIG. 3.
FIG. 3.

AFM images of surface morphologies of (a) LED A and (b) LED B.

Image of FIG. 4.
FIG. 4.

(a) curve of LED A and LED B, (b) light output power of LED A and LED B as a function of current.

Image of FIG. 5.
FIG. 5.

Energy band diagrams of well and barrier layer of LED A and LED B at 4 V, (a) valence band and (b) conduction band. Carrier concentration throughout MQW at 4 V, (c) LED A and (d) LED B.

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/content/aip/journal/apl/96/5/10.1063/1.3302458
2010-02-03
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/5/10.1063/1.3302458
10.1063/1.3302458
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