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Principle of microtip fabrication: (a) IR sensitive resist local deposition on the VCSEL wafer followed by IR exposure created by VCSEL emission. (b) Resulting microtip obtained after rinsing.
SEM image of a microtip self-written at the center of a 763 nm single mode VCSEL. (a) The applied current is 0.6 mA and the resist thickness is . Inset: zoom on the microtip. (b) SEM view of a microtip fabricated using the same applied current (0.6 mA) and a higher resist thickness . In both cases, the height of the tip is found to be equal to the initial resist thickness.
(a) cw characteristics measured under probes for a VCSEL device without tip (straight curves) and with an integrated tip (4.2 thick/dotted curves). (b) Beam spot width measured in function of the distance to the VCSEL surface for two tips created with two different resist thicknesses: (circles) and (triangles) and compared to a reference sample with no tip (squares).
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