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Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire
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10.1063/1.3304004
/content/aip/journal/apl/96/5/10.1063/1.3304004
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/5/10.1063/1.3304004

Figures

Image of FIG. 1.
FIG. 1.

Confocal microscopy images of PSS: (a) A-PSS, (b) B-PSS, (c) C-PSS, and (d) D-PSS.

Image of FIG. 2.
FIG. 2.

Bright-field TEM images of (a) A-PSS and (b) D-PSS. (c), (d), (e), and (f) are SAD patterns taken from (a) A-PSS. These patterns are from GaN I[(c)], GaN II[(d)], sapphire substrate[(e)], and interface region [(f)]among GaN I, GaN II, and sapphire substrate. (g) and (h) are HRTEM images of (g) GaN II region (zinc blende structure) and (h) GaN I region (wurtzite structure).

Tables

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Table I.

The parameters and performances of PSS-LEDs.

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/content/aip/journal/apl/96/5/10.1063/1.3304004
2010-02-02
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/5/10.1063/1.3304004
10.1063/1.3304004
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