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(a) Pulsed LIVs for single plasmon devices from two wafers grown with 45 repeats of designs A and B. The devices are 3 mm long, wide, and tested at 4 K. (b) The pulsed spectra obtained from these devices at .
(a) Pulsed LIVs taken from a wide 2.99 mm long device at a range of temperatures with a 5% duty cycle. (b) CW IV at 10 K from the same device with corresponding differential resistance, inset: diagram of the double metal device.
cw spectra taken from the same device as Fig. 2.
(a) Spectral gain below threshold , near threshold , at maximum power , and at shut-off . (b) Left axis: Gain as a function of current density at 2.53 THz and 2.92 THz. Right axis: Power output as a function of current density. The threshold for this device is .
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