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TEM image of an InAs epilayer grown by MBE on a SI GaAs substrate showing dislocations at the InAs/GaAs interface. Top inset: Optical image of a planar device with a channel of length and width . The arrow indicates the direction of the current, . Bottom inset: curves at and 293 K for a planar device based on InAs.
curves at for samples with channels of length and width . Dashed lines correspond to bias regions in which the is measured in the pulsed mode. Continuous lines correspond to the measured in the dc mode. Insets: curves for structures with different lengths and width .
Dependence on and of the critical field for the sharp increase in current in . The lines correspond to the calculated values of using a ballistic and a diffusive model for (dotted lines) and (continuous lines). The inset shows the energy dispersion for the conduction electrons in InAs and . For , we have used a two-level band anticrossing model (Ref. 12).
Dependence of the electron cyclotron mass , electron Hall mobility and threshold energy for impact ionization on the nitrogen-content, , in the alloy. Values of and are from Ref. 16.
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