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Photoconductivity in single AlN nanowires by subband gap excitation
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10.1063/1.3292211
/content/aip/journal/apl/96/6/10.1063/1.3292211
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/6/10.1063/1.3292211
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The FESEM image of the ensemble of the as-grown AlN nanowires. (b) The TEM image and its corresponding SAD pattern (the inset) of a single AlN nanowire. (c) The Raman spectrum and (d) the CL spectrum of the as-grown AlN nanowires.

Image of FIG. 2.
FIG. 2.

The curves of a single AlN nanowire with length of and diameter of 72 nm. The inset shows a typical FESEM image of a single AlN nanowire device with two Pt contact fabricated by FIB deposition.

Image of FIG. 3.
FIG. 3.

The current response curve of the single AlN nanowire in the air and vacuum under repeated excitation using different photon energy of (a) 1.53 eV, (b) 2.33 eV, (c) 3.06 eV, and (d) 3.81 eV. The colored shadow regions represent the periods of laser on.

Image of FIG. 4.
FIG. 4.

The schematic drawings of the energy band and photoconduction process near surface region of an AlN nanowire. The mechanisms leading to the negative PC in the core and positive PC on the surface due to oxygen sensitization are illustrated as well.

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/content/aip/journal/apl/96/6/10.1063/1.3292211
2010-02-09
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoconductivity in single AlN nanowires by subband gap excitation
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/6/10.1063/1.3292211
10.1063/1.3292211
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